Modeling of Eeprom

• Main Author: Liong, Luey Chwan.
• Other Authors: Liu, Po-ching
• Format: Theses and Dissertations
• Language: English
• Published: 2009
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
• Online Access: http://hdl.handle.net/10356/19809
• Institution: Nanyang Technological University

Flotox structure has been a very popular choice for storage device in EEPROM chips. In this project, two aspects of such a structure were studied; the current-voltage characteristics under DC conditions and the transient behavior.