Modeling of Eeprom
Flotox structure has been a very popular choice for storage device in EEPROM chips. In this project, two aspects of such a structure were studied; the current-voltage characteristics under DC conditions and the transient behavior.
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sg-ntu-dr.10356-198092023-07-04T15:30:20Z Modeling of Eeprom Liong, Luey Chwan. Liu, Po-ching School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits Flotox structure has been a very popular choice for storage device in EEPROM chips. In this project, two aspects of such a structure were studied; the current-voltage characteristics under DC conditions and the transient behavior. Master of Engineering 2009-12-14T06:38:57Z 2009-12-14T06:38:57Z 1992 1992 Thesis http://hdl.handle.net/10356/19809 en NANYANG TECHNOLOGICAL UNIVERSITY 111 p. application/pdf |
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DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits Liong, Luey Chwan. Modeling of Eeprom |
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Flotox structure has been a very popular choice for storage device in EEPROM chips. In this project, two aspects of such a structure were studied; the current-voltage characteristics under DC conditions and the transient behavior. |
author2 |
Liu, Po-ching |
author_facet |
Liu, Po-ching Liong, Luey Chwan. |
format |
Theses and Dissertations |
author |
Liong, Luey Chwan. |
author_sort |
Liong, Luey Chwan. |
title |
Modeling of Eeprom |
title_short |
Modeling of Eeprom |
title_full |
Modeling of Eeprom |
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Modeling of Eeprom |
title_full_unstemmed |
Modeling of Eeprom |
title_sort |
modeling of eeprom |
publishDate |
2009 |
url |
http://hdl.handle.net/10356/19809 |
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1772825866649206784 |