Modeling of submicron MOSFETs
The Lightly Doped Drain (LDD) structure is the current-art transistor structure for fabricating submicron and deep-submicron Metal-Oxide-Semiconductor Field-Effect-Transistors (MOSFETs). This thesis describes a simple and efficient (computer-time less intensive) model for predicting the LDD MOSFET c...
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| Format: | Theses and Dissertations |
| Language: | English |
| Published: |
2009
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| Online Access: | http://hdl.handle.net/10356/19757 |
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| Institution: | Nanyang Technological University |
| Language: | English |
| Summary: | The Lightly Doped Drain (LDD) structure is the current-art transistor structure for fabricating submicron and deep-submicron Metal-Oxide-Semiconductor Field-Effect-Transistors (MOSFETs). This thesis describes a simple and efficient (computer-time less intensive) model for predicting the LDD MOSFET current-voltage (I-V) characteristics. |
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