Modeling of submicron MOSFETs
The Lightly Doped Drain (LDD) structure is the current-art transistor structure for fabricating submicron and deep-submicron Metal-Oxide-Semiconductor Field-Effect-Transistors (MOSFETs). This thesis describes a simple and efficient (computer-time less intensive) model for predicting the LDD MOSFET c...
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| Online Access: | http://hdl.handle.net/10356/19757 |
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sg-ntu-dr.10356-197572023-07-04T15:45:27Z Modeling of submicron MOSFETs Chua, Ley Mui. Lau, Kim Teen School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Semiconductors The Lightly Doped Drain (LDD) structure is the current-art transistor structure for fabricating submicron and deep-submicron Metal-Oxide-Semiconductor Field-Effect-Transistors (MOSFETs). This thesis describes a simple and efficient (computer-time less intensive) model for predicting the LDD MOSFET current-voltage (I-V) characteristics. 2009-12-14T06:34:11Z 2009-12-14T06:34:11Z 1994 1994 Thesis http://hdl.handle.net/10356/19757 en NANYANG TECHNOLOGICAL UNIVERSITY 155 p. application/pdf |
| institution |
Nanyang Technological University |
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NTU Library |
| continent |
Asia |
| country |
Singapore Singapore |
| content_provider |
NTU Library |
| collection |
DR-NTU |
| language |
English |
| topic |
DRNTU::Engineering::Electrical and electronic engineering::Semiconductors |
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DRNTU::Engineering::Electrical and electronic engineering::Semiconductors Chua, Ley Mui. Modeling of submicron MOSFETs |
| description |
The Lightly Doped Drain (LDD) structure is the current-art transistor structure for fabricating submicron and deep-submicron Metal-Oxide-Semiconductor Field-Effect-Transistors (MOSFETs). This thesis describes a simple and efficient (computer-time less intensive) model for predicting the LDD MOSFET current-voltage (I-V) characteristics. |
| author2 |
Lau, Kim Teen |
| author_facet |
Lau, Kim Teen Chua, Ley Mui. |
| format |
Theses and Dissertations |
| author |
Chua, Ley Mui. |
| author_sort |
Chua, Ley Mui. |
| title |
Modeling of submicron MOSFETs |
| title_short |
Modeling of submicron MOSFETs |
| title_full |
Modeling of submicron MOSFETs |
| title_fullStr |
Modeling of submicron MOSFETs |
| title_full_unstemmed |
Modeling of submicron MOSFETs |
| title_sort |
modeling of submicron mosfets |
| publishDate |
2009 |
| url |
http://hdl.handle.net/10356/19757 |
| _version_ |
1772825169926029312 |