Photoluminescence studies of compound semiconductor structures grown by molecular beam epitaxy
Low temperature photoluminescence measurements were carried out on Be doped GaAs layers and strained InGaAs/(Al)GaAs heterostructures grown by MBE. PL results demonstrate that the main emission associated with Be acceptors moves to a lower energy with increase in the hole concentration. This may be...
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| Format: | Theses and Dissertations |
| Language: | English |
| Published: |
2009
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| Online Access: | http://hdl.handle.net/10356/19789 |
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| Institution: | Nanyang Technological University |
| Language: | English |
| Summary: | Low temperature photoluminescence measurements were carried out on Be doped GaAs layers and strained InGaAs/(Al)GaAs heterostructures grown by MBE. PL results demonstrate that the main emission associated with Be acceptors moves to a lower energy with increase in the hole concentration. This may be attributed to spreading of the dopant energy level into an energy band at high doping levels. An empirical relationship between the PL linewidth and hole concentration at 4 K has been obtained, from which some estimate of the hole concentration in the samples could be obtained. |
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