Photoluminescence studies of compound semiconductor structures grown by molecular beam epitaxy

Low temperature photoluminescence measurements were carried out on Be doped GaAs layers and strained InGaAs/(Al)GaAs heterostructures grown by MBE. PL results demonstrate that the main emission associated with Be acceptors moves to a lower energy with increase in the hole concentration. This may be...

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Main Author:	Li, He Ming.
Other Authors:	Yoon, Soon Fatt
Format:	Theses and Dissertations
Language:	English
Published:	2009
Subjects:	DRNTU::Engineering::Materials::Microelectronics and semiconductor materials
Online Access:	http://hdl.handle.net/10356/19789
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Institution:	Nanyang Technological University
Language:	English

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spelling	sg-ntu-dr.10356-197892023-07-04T15:46:22Z Photoluminescence studies of compound semiconductor structures grown by molecular beam epitaxy Li, He Ming. Yoon, Soon Fatt School of Electrical and Electronic Engineering DRNTU::Engineering::Materials::Microelectronics and semiconductor materials Low temperature photoluminescence measurements were carried out on Be doped GaAs layers and strained InGaAs/(Al)GaAs heterostructures grown by MBE. PL results demonstrate that the main emission associated with Be acceptors moves to a lower energy with increase in the hole concentration. This may be attributed to spreading of the dopant energy level into an energy band at high doping levels. An empirical relationship between the PL linewidth and hole concentration at 4 K has been obtained, from which some estimate of the hole concentration in the samples could be obtained. 2009-12-14T06:37:58Z 2009-12-14T06:37:58Z 1993 1993 Thesis http://hdl.handle.net/10356/19789 en NANYANG TECHNOLOGICAL UNIVERSITY 124 p. application/pdf
institution	Nanyang Technological University
building	NTU Library
continent	Asia
country	Singapore Singapore
content_provider	NTU Library
collection	DR-NTU
language	English
topic	DRNTU::Engineering::Materials::Microelectronics and semiconductor materials
spellingShingle	DRNTU::Engineering::Materials::Microelectronics and semiconductor materials Li, He Ming. Photoluminescence studies of compound semiconductor structures grown by molecular beam epitaxy
description	Low temperature photoluminescence measurements were carried out on Be doped GaAs layers and strained InGaAs/(Al)GaAs heterostructures grown by MBE. PL results demonstrate that the main emission associated with Be acceptors moves to a lower energy with increase in the hole concentration. This may be attributed to spreading of the dopant energy level into an energy band at high doping levels. An empirical relationship between the PL linewidth and hole concentration at 4 K has been obtained, from which some estimate of the hole concentration in the samples could be obtained.
author2	Yoon, Soon Fatt
author_facet	Yoon, Soon Fatt Li, He Ming.
format	Theses and Dissertations
author	Li, He Ming.
author_sort	Li, He Ming.
title	Photoluminescence studies of compound semiconductor structures grown by molecular beam epitaxy
title_short	Photoluminescence studies of compound semiconductor structures grown by molecular beam epitaxy
title_full	Photoluminescence studies of compound semiconductor structures grown by molecular beam epitaxy
title_fullStr	Photoluminescence studies of compound semiconductor structures grown by molecular beam epitaxy
title_full_unstemmed	Photoluminescence studies of compound semiconductor structures grown by molecular beam epitaxy
title_sort	photoluminescence studies of compound semiconductor structures grown by molecular beam epitaxy
publishDate	2009
url	http://hdl.handle.net/10356/19789
_version_	1772828912199401472

Photoluminescence studies of compound semiconductor structures grown by molecular beam epitaxy

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