Photoluminescence studies of compound semiconductor structures grown by molecular beam epitaxy

• Main Author: Li, He Ming.
• Other Authors: Yoon, Soon Fatt
• Format: Theses and Dissertations
• Language: English
• Published: 2009
• Subjects: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials
• Online Access: http://hdl.handle.net/10356/19789
• Institution: Nanyang Technological University

Low temperature photoluminescence measurements were carried out on Be doped GaAs layers and strained InGaAs/(Al)GaAs heterostructures grown by MBE. PL results demonstrate that the main emission associated with Be acceptors moves to a lower energy with increase in the hole concentration. This may be...