ZnO nanostructure growth and its application in light-emitting diodes

In past few years, technology relating with semiconductor industry brought various new inventions into our daily life. With the development of semiconductor, interest in electronic and optoelectronic products becomes down to the nanoscale. One dimensional semiconducting materials show the potential...

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Main Author: Hnin Lwin Lwin Aye.
Other Authors: Sun Xiaowei
Format: Final Year Project
Language:English
Published: 2010
Subjects:
Online Access:http://hdl.handle.net/10356/20743
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-207432023-07-07T16:00:57Z ZnO nanostructure growth and its application in light-emitting diodes Hnin Lwin Lwin Aye. Sun Xiaowei School of Electrical and Electronic Engineering Microelectronics Centre DRNTU::Engineering::Electrical and electronic engineering::Microelectronics In past few years, technology relating with semiconductor industry brought various new inventions into our daily life. With the development of semiconductor, interest in electronic and optoelectronic products becomes down to the nanoscale. One dimensional semiconducting materials show the potential to be used as building blocks for future nanoelectronics due to the reduced the device dimensions and their unique properties and functions Zinc oxide (ZnO) as one of the most promising semiconductor materials, has a wide direct energy bandgap of 3.37 eV and a large exciton binding energy of 60 meV at room temperature. Also, it may be the most richest family in the metal oxide semiconductor materials since various morphologies can be achieved in ZnO such as nanowires, nanorods, nanobelts, nanodisks, and nanotubes. Therefore, ZnO nanostructures have stirred new interest as a promising nanoelectronic material in UV lasers, light-emitting diodes, solar cells and gas sensors. The main purpose of this project is focus on growing ZnO nanostructures by using vapor phase transport technique and study the dependence of different morphologies on the different growth parameters. The surface morphology of the products is characterized by scanning electron microscope (SEM). Furthermore, light emitting diode based on the good quality ZnO nanostructure were fabricated and characterized. Bachelor of Engineering 2010-01-07T03:23:09Z 2010-01-07T03:23:09Z 2009 2009 Final Year Project (FYP) http://hdl.handle.net/10356/20743 en Nanyang Technological University 70 p. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
spellingShingle DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
Hnin Lwin Lwin Aye.
ZnO nanostructure growth and its application in light-emitting diodes
description In past few years, technology relating with semiconductor industry brought various new inventions into our daily life. With the development of semiconductor, interest in electronic and optoelectronic products becomes down to the nanoscale. One dimensional semiconducting materials show the potential to be used as building blocks for future nanoelectronics due to the reduced the device dimensions and their unique properties and functions Zinc oxide (ZnO) as one of the most promising semiconductor materials, has a wide direct energy bandgap of 3.37 eV and a large exciton binding energy of 60 meV at room temperature. Also, it may be the most richest family in the metal oxide semiconductor materials since various morphologies can be achieved in ZnO such as nanowires, nanorods, nanobelts, nanodisks, and nanotubes. Therefore, ZnO nanostructures have stirred new interest as a promising nanoelectronic material in UV lasers, light-emitting diodes, solar cells and gas sensors. The main purpose of this project is focus on growing ZnO nanostructures by using vapor phase transport technique and study the dependence of different morphologies on the different growth parameters. The surface morphology of the products is characterized by scanning electron microscope (SEM). Furthermore, light emitting diode based on the good quality ZnO nanostructure were fabricated and characterized.
author2 Sun Xiaowei
author_facet Sun Xiaowei
Hnin Lwin Lwin Aye.
format Final Year Project
author Hnin Lwin Lwin Aye.
author_sort Hnin Lwin Lwin Aye.
title ZnO nanostructure growth and its application in light-emitting diodes
title_short ZnO nanostructure growth and its application in light-emitting diodes
title_full ZnO nanostructure growth and its application in light-emitting diodes
title_fullStr ZnO nanostructure growth and its application in light-emitting diodes
title_full_unstemmed ZnO nanostructure growth and its application in light-emitting diodes
title_sort zno nanostructure growth and its application in light-emitting diodes
publishDate 2010
url http://hdl.handle.net/10356/20743
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