Ferroelectric thin films by RF sputtering technology

A simple hydrogen interface-blocking model is discussed.

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Bibliographic Details
Main Author: Zhu, Weiguang
Other Authors: School of Electrical and Electronic Engineering
Format: Research Report
Published: 2008
Subjects:
Online Access:http://hdl.handle.net/10356/2733
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Institution: Nanyang Technological University
id sg-ntu-dr.10356-2733
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spelling sg-ntu-dr.10356-27332023-03-04T03:24:50Z Ferroelectric thin films by RF sputtering technology Zhu, Weiguang School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Microelectronics A simple hydrogen interface-blocking model is discussed. RG 56/96 2008-09-17T09:13:58Z 2008-09-17T09:13:58Z 2000 2000 Research Report http://hdl.handle.net/10356/2733 Nanyang Technological University application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
topic DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
spellingShingle DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
Zhu, Weiguang
Ferroelectric thin films by RF sputtering technology
description A simple hydrogen interface-blocking model is discussed.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Zhu, Weiguang
format Research Report
author Zhu, Weiguang
author_sort Zhu, Weiguang
title Ferroelectric thin films by RF sputtering technology
title_short Ferroelectric thin films by RF sputtering technology
title_full Ferroelectric thin films by RF sputtering technology
title_fullStr Ferroelectric thin films by RF sputtering technology
title_full_unstemmed Ferroelectric thin films by RF sputtering technology
title_sort ferroelectric thin films by rf sputtering technology
publishDate 2008
url http://hdl.handle.net/10356/2733
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