Fabrication and characterisation of microelectronics devices, circuits and system II

Fabrication and characterisation of microelectronics devices, circuits and system II

The quantum well intermixing (QWI) technique using pulsed-photoabsorption-induced disordering (P-PAID) in the InGaAs/InGaAsP material system has been investigated.

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Bibliographic Details
Main Author: Zhang, Dao Hua
Other Authors: School of Electrical and Electronic Engineering
Format: Research Report
Published: 2008
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
Online Access:http://hdl.handle.net/10356/2866
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Institution: Nanyang Technological University
Description
Summary:The quantum well intermixing (QWI) technique using pulsed-photoabsorption-induced disordering (P-PAID) in the InGaAs/InGaAsP material system has been investigated.

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