Fabrication and characterisation of microelectronics devices, circuits and system II
The quantum well intermixing (QWI) technique using pulsed-photoabsorption-induced disordering (P-PAID) in the InGaAs/InGaAsP material system has been investigated.
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| 格式: | Research Report |
| 出版: |
2008
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| 在線閱讀: | http://hdl.handle.net/10356/2866 |
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| 總結: | The quantum well intermixing (QWI) technique using pulsed-photoabsorption-induced disordering (P-PAID) in the InGaAs/InGaAsP material system has been investigated. |
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