Development of NTU 1.2(m)m CMOS process technology

• Main Author: Shen, Hongliang.
• Other Authors: Tse, Man Siu
• Format: Theses and Dissertations
• Published: 2008
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
• Online Access: http://hdl.handle.net/10356/3233
• Institution: Nanyang Technological University

This project aims to develop and optimize the baseline 1.2um Twin-Well CMOS technology which will be extended to 1.2um SiGe BiCMOS technology in the future Processes such as Punch-through implant, Sidewall spacer and Halo Implant were studied to control the short channel effect.