Modelling and characterisation of heterostructure devices for MMIC application
For development of MMIC amplifier using GaAs HEMT and HBT devices developed in-house, it is essential to select devices of appropriate size for best power performance. The overall objective of this has been dc and microwave characterization of HEMT and HBT devices.
محفوظ في:
| المؤلف الرئيسي: | |
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| مؤلفون آخرون: | |
| التنسيق: | Theses and Dissertations |
| منشور في: |
2008
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| الموضوعات: | |
| الوصول للمادة أونلاين: | http://hdl.handle.net/10356/3290 |
| الوسوم: |
إضافة وسم
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| الملخص: | For development of MMIC amplifier using GaAs HEMT and HBT devices developed in-house, it is essential to select devices of appropriate size for best power performance. The overall objective of this has been dc and microwave characterization of HEMT and HBT devices. |
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