Modelling and characterisation of heterostructure devices for MMIC application

For development of MMIC amplifier using GaAs HEMT and HBT devices developed in-house, it is essential to select devices of appropriate size for best power performance. The overall objective of this has been dc and microwave characterization of HEMT and HBT devices.

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Bibliographic Details
Main Author: Subrata Halder.
Other Authors: Ng, Geok Ing
Format: Theses and Dissertations
Published: 2008
Subjects:
Online Access:http://hdl.handle.net/10356/3290
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Institution: Nanyang Technological University
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