Design and fabrication of III-V RF devices for MMIC applications
Submicron AlGaAs/InGaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) grown on GaAs substrate by MBE (Molecular Beam Epitaxy) has been designed, fabricated and characterized in this work.
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| 格式: | Theses and Dissertations |
| 出版: |
2008
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| 主題: | |
| 在線閱讀: | http://hdl.handle.net/10356/3437 |
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| 機構: | Nanyang Technological University |