Design and fabrication of III-V RF devices for MMIC applications

Design and fabrication of III-V RF devices for MMIC applications

Submicron AlGaAs/InGaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) grown on GaAs substrate by MBE (Molecular Beam Epitaxy) has been designed, fabricated and characterized in this work.

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Bibliographic Details
Main Author: Ang, Kian Siong
Other Authors: Ng, Geok Ing
Format: Theses and Dissertations
Published: 2008
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits
Online Access:http://hdl.handle.net/10356/3437
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Institution: Nanyang Technological University
Description
Summary:Submicron AlGaAs/InGaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) grown on GaAs substrate by MBE (Molecular Beam Epitaxy) has been designed, fabricated and characterized in this work.

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