Design and fabrication of III-V RF devices for MMIC applications

Submicron AlGaAs/InGaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) grown on GaAs substrate by MBE (Molecular Beam Epitaxy) has been designed, fabricated and characterized in this work.

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Bibliographic Details
Main Author:	Ang, Kian Siong
Other Authors:	Ng, Geok Ing
Format:	Theses and Dissertations
Published:	2008
Subjects:	DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits
Online Access:	http://hdl.handle.net/10356/3437
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Institution:	Nanyang Technological University

id	sg-ntu-dr.10356-3437
record_format	dspace
spelling	sg-ntu-dr.10356-34372023-07-04T15:16:55Z Design and fabrication of III-V RF devices for MMIC applications Ang, Kian Siong Ng, Geok Ing School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits Submicron AlGaAs/InGaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) grown on GaAs substrate by MBE (Molecular Beam Epitaxy) has been designed, fabricated and characterized in this work. Master of Engineering 2008-09-17T09:30:11Z 2008-09-17T09:30:11Z 1999 1999 Thesis http://hdl.handle.net/10356/3437 Nanyang Technological University application/pdf
institution	Nanyang Technological University
building	NTU Library
continent	Asia
country	Singapore Singapore
content_provider	NTU Library
collection	DR-NTU
topic	DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits
spellingShingle	DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits Ang, Kian Siong Design and fabrication of III-V RF devices for MMIC applications
description	Submicron AlGaAs/InGaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) grown on GaAs substrate by MBE (Molecular Beam Epitaxy) has been designed, fabricated and characterized in this work.
author2	Ng, Geok Ing
author_facet	Ng, Geok Ing Ang, Kian Siong
format	Theses and Dissertations
author	Ang, Kian Siong
author_sort	Ang, Kian Siong
title	Design and fabrication of III-V RF devices for MMIC applications
title_short	Design and fabrication of III-V RF devices for MMIC applications
title_full	Design and fabrication of III-V RF devices for MMIC applications
title_fullStr	Design and fabrication of III-V RF devices for MMIC applications
title_full_unstemmed	Design and fabrication of III-V RF devices for MMIC applications
title_sort	design and fabrication of iii-v rf devices for mmic applications
publishDate	2008
url	http://hdl.handle.net/10356/3437
_version_	1772828298989010944

Design and fabrication of III-V RF devices for MMIC applications

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