Design and fabrication of III-V RF devices for MMIC applications

• Main Author: Ang, Kian Siong
• Other Authors: Ng, Geok Ing
• Format: Theses and Dissertations
• Published: 2008
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits
• Online Access: http://hdl.handle.net/10356/3437
• Institution: Nanyang Technological University

Submicron AlGaAs/InGaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) grown on GaAs substrate by MBE (Molecular Beam Epitaxy) has been designed, fabricated and characterized in this work.