Modelling and characterisation of heterostructure devices for MMIC application
For development of MMIC amplifier using GaAs HEMT and HBT devices developed in-house, it is essential to select devices of appropriate size for best power performance. The overall objective of this has been dc and microwave characterization of HEMT and HBT devices.
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| 格式: | Theses and Dissertations |
| 出版: |
2008
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| 主題: | |
| 在線閱讀: | http://hdl.handle.net/10356/3290 |
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| 機構: | Nanyang Technological University |
| 總結: | For development of MMIC amplifier using GaAs HEMT and HBT devices developed in-house, it is essential to select devices of appropriate size for best power performance. The overall objective of this has been dc and microwave characterization of HEMT and HBT devices. |
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