Study of InGaAsP/InP quantum well structures grown by solid source MBE and their application for long wavelength infrared light detection
The energy band dispersion relations for InGaAsP/InP multi quantum well (MQW) structures were investigated using 8x8 method. In this study, different strain cases in the well of the structures were investigated with well width and well doping concentration as parameters. The results give out the ene...
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sg-ntu-dr.10356-33072023-07-04T17:10:50Z Study of InGaAsP/InP quantum well structures grown by solid source MBE and their application for long wavelength infrared light detection Sun, Lu Ahn Jaeshin Zhang Dao Hua School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Molecular electronics The energy band dispersion relations for InGaAsP/InP multi quantum well (MQW) structures were investigated using 8x8 method. In this study, different strain cases in the well of the structures were investigated with well width and well doping concentration as parameters. The results give out the energy band structure for each case explicitly. To the best of our knowledge, it is the first study of InGaAsP/InP MQW energy band structure considering doping concentration, strain and well width effect at the same time. DOCTOR OF PHILOSOPHY (EEE) 2008-09-17T09:27:02Z 2008-09-17T09:27:02Z 2005 2005 Thesis Sun, L. (2005). Study of InGaAsP/InP quantum well structures grown by solid source MBE and their application for long wavelength infrared light detection. Doctoral thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/3307 10.32657/10356/3307 Nanyang Technological University application/pdf |
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DRNTU::Engineering::Electrical and electronic engineering::Molecular electronics Sun, Lu Study of InGaAsP/InP quantum well structures grown by solid source MBE and their application for long wavelength infrared light detection |
| description |
The energy band dispersion relations for InGaAsP/InP multi quantum well (MQW) structures were investigated using 8x8 method. In this study, different strain cases in the well of the structures were investigated with well width and well doping concentration as parameters. The results give out the energy band structure for each case explicitly. To the best of our knowledge, it is the first study of InGaAsP/InP MQW energy band structure considering doping concentration, strain and well width effect at the same time. |
| author2 |
Ahn Jaeshin |
| author_facet |
Ahn Jaeshin Sun, Lu |
| format |
Theses and Dissertations |
| author |
Sun, Lu |
| author_sort |
Sun, Lu |
| title |
Study of InGaAsP/InP quantum well structures grown by solid source MBE and their application for long wavelength infrared light detection |
| title_short |
Study of InGaAsP/InP quantum well structures grown by solid source MBE and their application for long wavelength infrared light detection |
| title_full |
Study of InGaAsP/InP quantum well structures grown by solid source MBE and their application for long wavelength infrared light detection |
| title_fullStr |
Study of InGaAsP/InP quantum well structures grown by solid source MBE and their application for long wavelength infrared light detection |
| title_full_unstemmed |
Study of InGaAsP/InP quantum well structures grown by solid source MBE and their application for long wavelength infrared light detection |
| title_sort |
study of ingaasp/inp quantum well structures grown by solid source mbe and their application for long wavelength infrared light detection |
| publishDate |
2008 |
| url |
https://hdl.handle.net/10356/3307 |
| _version_ |
1772828730759053312 |