Study of InGaAsP/InP quantum well structures grown by solid source MBE and their application for long wavelength infrared light detection

The energy band dispersion relations for InGaAsP/InP multi quantum well (MQW) structures were investigated using 8x8 method. In this study, different strain cases in the well of the structures were investigated with well width and well doping concentration as parameters. The results give out the ene...

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Main Author: Sun, Lu
Other Authors: Ahn Jaeshin
Format: Theses and Dissertations
Published: 2008
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Online Access:https://hdl.handle.net/10356/3307
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Institution: Nanyang Technological University
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spelling sg-ntu-dr.10356-33072023-07-04T17:10:50Z Study of InGaAsP/InP quantum well structures grown by solid source MBE and their application for long wavelength infrared light detection Sun, Lu Ahn Jaeshin Zhang Dao Hua School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Molecular electronics The energy band dispersion relations for InGaAsP/InP multi quantum well (MQW) structures were investigated using 8x8 method. In this study, different strain cases in the well of the structures were investigated with well width and well doping concentration as parameters. The results give out the energy band structure for each case explicitly. To the best of our knowledge, it is the first study of InGaAsP/InP MQW energy band structure considering doping concentration, strain and well width effect at the same time. DOCTOR OF PHILOSOPHY (EEE) 2008-09-17T09:27:02Z 2008-09-17T09:27:02Z 2005 2005 Thesis Sun, L. (2005). Study of InGaAsP/InP quantum well structures grown by solid source MBE and their application for long wavelength infrared light detection. Doctoral thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/3307 10.32657/10356/3307 Nanyang Technological University application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
topic DRNTU::Engineering::Electrical and electronic engineering::Molecular electronics
spellingShingle DRNTU::Engineering::Electrical and electronic engineering::Molecular electronics
Sun, Lu
Study of InGaAsP/InP quantum well structures grown by solid source MBE and their application for long wavelength infrared light detection
description The energy band dispersion relations for InGaAsP/InP multi quantum well (MQW) structures were investigated using 8x8 method. In this study, different strain cases in the well of the structures were investigated with well width and well doping concentration as parameters. The results give out the energy band structure for each case explicitly. To the best of our knowledge, it is the first study of InGaAsP/InP MQW energy band structure considering doping concentration, strain and well width effect at the same time.
author2 Ahn Jaeshin
author_facet Ahn Jaeshin
Sun, Lu
format Theses and Dissertations
author Sun, Lu
author_sort Sun, Lu
title Study of InGaAsP/InP quantum well structures grown by solid source MBE and their application for long wavelength infrared light detection
title_short Study of InGaAsP/InP quantum well structures grown by solid source MBE and their application for long wavelength infrared light detection
title_full Study of InGaAsP/InP quantum well structures grown by solid source MBE and their application for long wavelength infrared light detection
title_fullStr Study of InGaAsP/InP quantum well structures grown by solid source MBE and their application for long wavelength infrared light detection
title_full_unstemmed Study of InGaAsP/InP quantum well structures grown by solid source MBE and their application for long wavelength infrared light detection
title_sort study of ingaasp/inp quantum well structures grown by solid source mbe and their application for long wavelength infrared light detection
publishDate 2008
url https://hdl.handle.net/10356/3307
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