Properties of amorphous Si-carbon alloy film deposited by FCVA technique

Properties of amorphous Si-carbon alloy film deposited by FCVA technique

Amorphous silicon-carbon alloy (a-Sii-xCx) has attracted much attention not only due to the composition dependent variability of their optical band gap but also because of their important roles as intermediate layer for the growth of diamond film on crystalline silicon and non-diamond substrates. [1...

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Main Author: Tan, Wee Ming
Other Authors: Tay, Beng Kang
Format: Theses and Dissertations
Published: 2008
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
Online Access:http://hdl.handle.net/10356/3399
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Institution: Nanyang Technological University
id sg-ntu-dr.10356-3399
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spelling sg-ntu-dr.10356-33992023-07-04T15:18:50Z Properties of amorphous Si-carbon alloy film deposited by FCVA technique Tan, Wee Ming Tay, Beng Kang School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials Amorphous silicon-carbon alloy (a-Sii-xCx) has attracted much attention not only due to the composition dependent variability of their optical band gap but also because of their important roles as intermediate layer for the growth of diamond film on crystalline silicon and non-diamond substrates. [1] Master of Science (Microelectronics) 2008-09-17T09:29:19Z 2008-09-17T09:29:19Z 2003 2003 Thesis http://hdl.handle.net/10356/3399 Nanyang Technological University application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
topic DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
spellingShingle DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
Tan, Wee Ming
Properties of amorphous Si-carbon alloy film deposited by FCVA technique
description Amorphous silicon-carbon alloy (a-Sii-xCx) has attracted much attention not only due to the composition dependent variability of their optical band gap but also because of their important roles as intermediate layer for the growth of diamond film on crystalline silicon and non-diamond substrates. [1]
author2 Tay, Beng Kang
author_facet Tay, Beng Kang
Tan, Wee Ming
format Theses and Dissertations
author Tan, Wee Ming
author_sort Tan, Wee Ming
title Properties of amorphous Si-carbon alloy film deposited by FCVA technique
title_short Properties of amorphous Si-carbon alloy film deposited by FCVA technique
title_full Properties of amorphous Si-carbon alloy film deposited by FCVA technique
title_fullStr Properties of amorphous Si-carbon alloy film deposited by FCVA technique
title_full_unstemmed Properties of amorphous Si-carbon alloy film deposited by FCVA technique
title_sort properties of amorphous si-carbon alloy film deposited by fcva technique
publishDate 2008
url http://hdl.handle.net/10356/3399
_version_ 1772827991570644992

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