Single-ended broadband silicon carbide MESFET power amplifier
Single-ended broadband amplifier was designed using Silicon Carbide MESFET. Taking into account, the device internal properties of wide-bandgap and high impedances. It makes single-ended broadband amplifier realizable by using simple matching networks.
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| Format: | Theses and Dissertations |
| Published: |
2008
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| Online Access: | https://hdl.handle.net/10356/3518 |
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| Institution: | Nanyang Technological University |