Modeling of MESFET/HEMT including high frequency effects
The behaviour of MESFET and HEMT devices in different frequency regions have been observed in the thesis. The observations are modeled using the small-signal equivalent circuit models.
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| Format: | Theses and Dissertations |
| Published: |
2008
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| Online Access: | http://hdl.handle.net/10356/4584 |
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| Institution: | Nanyang Technological University |