Modeling of MESFET/HEMT including high frequency effects
The behaviour of MESFET and HEMT devices in different frequency regions have been observed in the thesis. The observations are modeled using the small-signal equivalent circuit models.
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2008
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Online Access: | http://hdl.handle.net/10356/4584 |
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sg-ntu-dr.10356-45842023-07-04T15:43:09Z Modeling of MESFET/HEMT including high frequency effects Lee, Ting Huang. Ma, Jian-Guo School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits The behaviour of MESFET and HEMT devices in different frequency regions have been observed in the thesis. The observations are modeled using the small-signal equivalent circuit models. Master of Engineering 2008-09-17T09:54:45Z 2008-09-17T09:54:45Z 2001 2001 Thesis http://hdl.handle.net/10356/4584 Nanyang Technological University application/pdf |
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DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits Lee, Ting Huang. Modeling of MESFET/HEMT including high frequency effects |
description |
The behaviour of MESFET and HEMT devices in different frequency regions have been observed in the thesis. The observations are modeled using the small-signal equivalent circuit models. |
author2 |
Ma, Jian-Guo |
author_facet |
Ma, Jian-Guo Lee, Ting Huang. |
format |
Theses and Dissertations |
author |
Lee, Ting Huang. |
author_sort |
Lee, Ting Huang. |
title |
Modeling of MESFET/HEMT including high frequency effects |
title_short |
Modeling of MESFET/HEMT including high frequency effects |
title_full |
Modeling of MESFET/HEMT including high frequency effects |
title_fullStr |
Modeling of MESFET/HEMT including high frequency effects |
title_full_unstemmed |
Modeling of MESFET/HEMT including high frequency effects |
title_sort |
modeling of mesfet/hemt including high frequency effects |
publishDate |
2008 |
url |
http://hdl.handle.net/10356/4584 |
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1772826788335976448 |