Modeling of MESFET/HEMT including high frequency effects

• Main Author: Lee, Ting Huang.
• Other Authors: Ma, Jian-Guo
• Format: Theses and Dissertations
• Published: 2008
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
• Online Access: http://hdl.handle.net/10356/4584
• Institution: Nanyang Technological University

The behaviour of MESFET and HEMT devices in different frequency regions have been observed in the thesis. The observations are modeled using the small-signal equivalent circuit models.