Single-ended broadband silicon carbide MESFET power amplifier

Single-ended broadband amplifier was designed using Silicon Carbide MESFET. Taking into account, the device internal properties of wide-bandgap and high impedances. It makes single-ended broadband amplifier realizable by using simple matching networks.

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Bibliographic Details
Main Author:	Almira, Jean
Other Authors:	Shen Zhongxiang
Format:	Theses and Dissertations
Published:	2008
Subjects:	DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
Online Access:	https://hdl.handle.net/10356/3518
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	Nanyang Technological University

id	sg-ntu-dr.10356-3518
record_format	dspace
spelling	sg-ntu-dr.10356-35182023-07-04T17:34:01Z Single-ended broadband silicon carbide MESFET power amplifier Almira, Jean Shen Zhongxiang School of Electrical and Electronic Engineering Rusli DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits Single-ended broadband amplifier was designed using Silicon Carbide MESFET. Taking into account, the device internal properties of wide-bandgap and high impedances. It makes single-ended broadband amplifier realizable by using simple matching networks. MASTER OF ENGINEERING (EEE) 2008-09-17T09:31:31Z 2008-09-17T09:31:31Z 2006 2006 Thesis Almira, J. (2006). Single-ended broadband silicon carbide MESFET power amplifier. Master’s thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/3518 10.32657/10356/3518 Nanyang Technological University application/pdf
institution	Nanyang Technological University
building	NTU Library
continent	Asia
country	Singapore Singapore
content_provider	NTU Library
collection	DR-NTU
topic	DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
spellingShingle	DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits Almira, Jean Single-ended broadband silicon carbide MESFET power amplifier
description	Single-ended broadband amplifier was designed using Silicon Carbide MESFET. Taking into account, the device internal properties of wide-bandgap and high impedances. It makes single-ended broadband amplifier realizable by using simple matching networks.
author2	Shen Zhongxiang
author_facet	Shen Zhongxiang Almira, Jean
format	Theses and Dissertations
author	Almira, Jean
author_sort	Almira, Jean
title	Single-ended broadband silicon carbide MESFET power amplifier
title_short	Single-ended broadband silicon carbide MESFET power amplifier
title_full	Single-ended broadband silicon carbide MESFET power amplifier
title_fullStr	Single-ended broadband silicon carbide MESFET power amplifier
title_full_unstemmed	Single-ended broadband silicon carbide MESFET power amplifier
title_sort	single-ended broadband silicon carbide mesfet power amplifier
publishDate	2008
url	https://hdl.handle.net/10356/3518
_version_	1772825656758894592

Single-ended broadband silicon carbide MESFET power amplifier

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