Characterization and modeling of negative bias temperature instability in P-MOSFETs

This thesis is concerned with the study of negative bias temperature instability (NBTI) in p-MOSFETs. A simple characterization method based on the single-point measurement of the saturated drain current is first proposed to minimize the unwanted recovery effect during the NBTI measurement. A study...

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書目詳細資料
主要作者: Yang, Jianbo
其他作者: Chen Tupei
格式: Theses and Dissertations
語言:English
出版: 2010
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在線閱讀:https://hdl.handle.net/10356/35246
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