Characterization and modeling of negative bias temperature instability in P-MOSFETs
This thesis is concerned with the study of negative bias temperature instability (NBTI) in p-MOSFETs. A simple characterization method based on the single-point measurement of the saturated drain current is first proposed to minimize the unwanted recovery effect during the NBTI measurement. A study...
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格式: | Theses and Dissertations |
語言: | English |
出版: |
2010
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在線閱讀: | https://hdl.handle.net/10356/35246 |
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