Fabrication and characterization of AlGaAs/GaAs pseudomorphic high electron mobility transistors for power applications

• Main Author: Tan, Chee Leong
• Other Authors: K. Radhakrishnan
• Format: Theses and Dissertations
• Published: 2008
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Power electronics
• Online Access: https://hdl.handle.net/10356/3532
• Institution: Nanyang Technological University

A robust process technology using optical and electron beam lithography has been developed for 0.25 µm gate length AlGaAs/GaAs pseudomorphic high electron mobility transistors (PHEMTs). These devices, for power applications at microwave frequencies, demonstrated a high gate-drain breakdown voltage a...