Fabrication and characterization of AlGaAs/GaAs pseudomorphic high electron mobility transistors for power applications

A robust process technology using optical and electron beam lithography has been developed for 0.25 µm gate length AlGaAs/GaAs pseudomorphic high electron mobility transistors (PHEMTs). These devices, for power applications at microwave frequencies, demonstrated a high gate-drain breakdown voltage a...

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Bibliographic Details
Main Author: Tan, Chee Leong
Other Authors: K. Radhakrishnan
Format: Theses and Dissertations
Published: 2008
Subjects:
Online Access:https://hdl.handle.net/10356/3532
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Institution: Nanyang Technological University
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