Fabrication and characterization of AlGaAs/GaAs pseudomorphic high electron mobility transistors for power applications
A robust process technology using optical and electron beam lithography has been developed for 0.25 µm gate length AlGaAs/GaAs pseudomorphic high electron mobility transistors (PHEMTs). These devices, for power applications at microwave frequencies, demonstrated a high gate-drain breakdown voltage a...
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| 格式: | Theses and Dissertations |
| 出版: |
2008
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| 在線閱讀: | https://hdl.handle.net/10356/3532 |
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| 機構: | Nanyang Technological University |