Characterisation and modeling of chemical mechanical planarization (CMP) for deep submicron integrated circuit (IC) fabrication

199 p.

Saved in:

Bibliographic Details
Main Author:	Wang, Sim Kit
Other Authors:	David Lee Butler
Format:	Theses and Dissertations
Published:	2010
Subjects:	DRNTU::Engineering::Manufacturing
Online Access:	https://hdl.handle.net/10356/36109
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	Nanyang Technological University

id	sg-ntu-dr.10356-36109
record_format	dspace
spelling	sg-ntu-dr.10356-361092023-03-11T17:38:16Z Characterisation and modeling of chemical mechanical planarization (CMP) for deep submicron integrated circuit (IC) fabrication Wang, Sim Kit David Lee Butler School of Mechanical and Aerospace Engineering DRNTU::Engineering::Manufacturing 199 p. Chemical mechanical planarization (CMP) also known as chemical mechanical polishing has emerged as the fastest growing operation in the semiconductor manufacturing industry. It is expected to show equally explosive growth in the future [1]. CMP is the only known visible technology so far that can achieve the requirements of providing the global planarized thin film surface on wafer substrate. However, the CMP process still faces challenges such as material removal rate, uniformity of post thickness, selectivity, repeatability and defect for its successful implementation in deep submicron IC fabrication. Characterization and modeling are needed to address a variety of concerns in CMP applications. This thesis identifies and directs towards alleviating some of these major issues as highlighted in the following three paragraphs that associated with application of CMP in ultra large scale integrated (ULSI) circuit manufacturing. DOCTOR OF PHILOSOPHY (MAE) 2010-04-23T02:28:35Z 2010-04-23T02:28:35Z 2006 2006 Thesis Wang, S. K. (2006). Characterisation and modelling of chemical mechanical planarisation (CMP) for deep submicron integrated circuit (IC) fabrication. Doctoral thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/36109 10.32657/10356/36109 application/pdf
institution	Nanyang Technological University
building	NTU Library
continent	Asia
country	Singapore Singapore
content_provider	NTU Library
collection	DR-NTU
topic	DRNTU::Engineering::Manufacturing
spellingShingle	DRNTU::Engineering::Manufacturing Wang, Sim Kit Characterisation and modeling of chemical mechanical planarization (CMP) for deep submicron integrated circuit (IC) fabrication
description	199 p.
author2	David Lee Butler
author_facet	David Lee Butler Wang, Sim Kit
format	Theses and Dissertations
author	Wang, Sim Kit
author_sort	Wang, Sim Kit
title	Characterisation and modeling of chemical mechanical planarization (CMP) for deep submicron integrated circuit (IC) fabrication
title_short	Characterisation and modeling of chemical mechanical planarization (CMP) for deep submicron integrated circuit (IC) fabrication
title_full	Characterisation and modeling of chemical mechanical planarization (CMP) for deep submicron integrated circuit (IC) fabrication
title_fullStr	Characterisation and modeling of chemical mechanical planarization (CMP) for deep submicron integrated circuit (IC) fabrication
title_full_unstemmed	Characterisation and modeling of chemical mechanical planarization (CMP) for deep submicron integrated circuit (IC) fabrication
title_sort	characterisation and modeling of chemical mechanical planarization (cmp) for deep submicron integrated circuit (ic) fabrication
publishDate	2010
url	https://hdl.handle.net/10356/36109
_version_	1761781549146046464

Characterisation and modeling of chemical mechanical planarization (CMP) for deep submicron integrated circuit (IC) fabrication

Similar Items