Latchup analysis of deep submicrometer CMOS devices

• Main Author: Chen, Hong Lei.
• Other Authors: Yeo, Kiat Seng
• Format: Theses and Dissertations
• Published: 2008
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits
• Online Access: http://hdl.handle.net/10356/3671
• Institution: Nanyang Technological University

The effects of the following factors and their combinations on latchup behaviour of a Shallow Trench Isolation (STI) CMOS latchup test structure are studied: Varying both the STI dimensions and geometry parameters of the test structure. Varying the biasing conditions of the test structure. Changing...