Three-dimensional (3D) finite element modeling of stress distribution and migration in Cu interconnects
56 p.
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2010
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sg-ntu-dr.10356-391422023-07-04T15:30:19Z Three-dimensional (3D) finite element modeling of stress distribution and migration in Cu interconnects Anson Heryanto Pey Kin Leong School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering 56 p. Consistent improvements in integrated circuit density and performance have been amply demonstrated over the past 20 years by using transistor scaling, a model for simultaneously improving transistor density, performance, functionality and cost per function. In the transistor scaling sub-micron technology, the fact showed that interconnect delay starts to dominate the gate delay. Copper was introduced as a primary interconnect material in integrated circuit in 1997 by IBM due to its lower resistivity than aluminum. Master of Science (Microelectronics) 2010-05-21T04:45:37Z 2010-05-21T04:45:37Z 2007 2007 Thesis http://hdl.handle.net/10356/39142 application/pdf |
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DRNTU::Engineering::Electrical and electronic engineering Anson Heryanto Three-dimensional (3D) finite element modeling of stress distribution and migration in Cu interconnects |
description |
56 p. |
author2 |
Pey Kin Leong |
author_facet |
Pey Kin Leong Anson Heryanto |
format |
Theses and Dissertations |
author |
Anson Heryanto |
author_sort |
Anson Heryanto |
title |
Three-dimensional (3D) finite element modeling of stress distribution and migration in Cu interconnects |
title_short |
Three-dimensional (3D) finite element modeling of stress distribution and migration in Cu interconnects |
title_full |
Three-dimensional (3D) finite element modeling of stress distribution and migration in Cu interconnects |
title_fullStr |
Three-dimensional (3D) finite element modeling of stress distribution and migration in Cu interconnects |
title_full_unstemmed |
Three-dimensional (3D) finite element modeling of stress distribution and migration in Cu interconnects |
title_sort |
three-dimensional (3d) finite element modeling of stress distribution and migration in cu interconnects |
publishDate |
2010 |
url |
http://hdl.handle.net/10356/39142 |
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1772826063065317376 |