Development and optimization of 1.2 micron CMOS process technology
152 p.
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2010
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sg-ntu-dr.10356-391432023-07-04T15:25:39Z Development and optimization of 1.2 micron CMOS process technology Arati Majumder Tse Man Siu School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering 152 p. This project was aimed to study and optimize the baseline 1.2um Twin-Well CMOS technology, keeping in view the future application of this process to the 1.2um SiGe BiCMOS technology. Master of Science (Microelectronics) 2010-05-21T04:45:40Z 2010-05-21T04:45:40Z 2007 2007 Thesis http://hdl.handle.net/10356/39143 application/pdf |
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DRNTU::Engineering::Electrical and electronic engineering Arati Majumder Development and optimization of 1.2 micron CMOS process technology |
description |
152 p. |
author2 |
Tse Man Siu |
author_facet |
Tse Man Siu Arati Majumder |
format |
Theses and Dissertations |
author |
Arati Majumder |
author_sort |
Arati Majumder |
title |
Development and optimization of 1.2 micron CMOS process technology |
title_short |
Development and optimization of 1.2 micron CMOS process technology |
title_full |
Development and optimization of 1.2 micron CMOS process technology |
title_fullStr |
Development and optimization of 1.2 micron CMOS process technology |
title_full_unstemmed |
Development and optimization of 1.2 micron CMOS process technology |
title_sort |
development and optimization of 1.2 micron cmos process technology |
publishDate |
2010 |
url |
http://hdl.handle.net/10356/39143 |
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1772825731240296448 |