0.13-micron CMOS device characterization
This project emphasizes more on the transistor electrical characterization aspect as the input Front End of Line parameters are varied. This report covers the characterization of a fully working 0.13 um device with three layer metal copper Dual Damascene backend process.
Saved in:
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Theses and Dissertations |
| Published: |
2008
|
| Subjects: | |
| Online Access: | http://hdl.handle.net/10356/4564 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Institution: | Nanyang Technological University |