0.13-micron CMOS device characterization

• Main Author: Lazuardi, Stephen
• Other Authors: Krishnamachar Prasad
• Format: Theses and Dissertations
• Published: 2008
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
• Online Access: http://hdl.handle.net/10356/4564
• Institution: Nanyang Technological University

This project emphasizes more on the transistor electrical characterization aspect as the input Front End of Line parameters are varied. This report covers the characterization of a fully working 0.13 um device with three layer metal copper Dual Damascene backend process.