0.13-micron CMOS device characterization

This project emphasizes more on the transistor electrical characterization aspect as the input Front End of Line parameters are varied. This report covers the characterization of a fully working 0.13 um device with three layer metal copper Dual Damascene backend process.

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Bibliographic Details
Main Author:	Lazuardi, Stephen
Other Authors:	Krishnamachar Prasad
Format:	Theses and Dissertations
Published:	2008
Subjects:	DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
Online Access:	http://hdl.handle.net/10356/4564
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Institution:	Nanyang Technological University

id	sg-ntu-dr.10356-4564
record_format	dspace
spelling	sg-ntu-dr.10356-45642023-07-04T15:37:28Z 0.13-micron CMOS device characterization Lazuardi, Stephen Krishnamachar Prasad School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Microelectronics This project emphasizes more on the transistor electrical characterization aspect as the input Front End of Line parameters are varied. This report covers the characterization of a fully working 0.13 um device with three layer metal copper Dual Damascene backend process. Master of Science (Microelectronics) 2008-09-17T09:54:22Z 2008-09-17T09:54:22Z 2002 2002 Thesis http://hdl.handle.net/10356/4564 Nanyang Technological University 112 p. application/pdf
institution	Nanyang Technological University
building	NTU Library
continent	Asia
country	Singapore Singapore
content_provider	NTU Library
collection	DR-NTU
topic	DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
spellingShingle	DRNTU::Engineering::Electrical and electronic engineering::Microelectronics Lazuardi, Stephen 0.13-micron CMOS device characterization
description	This project emphasizes more on the transistor electrical characterization aspect as the input Front End of Line parameters are varied. This report covers the characterization of a fully working 0.13 um device with three layer metal copper Dual Damascene backend process.
author2	Krishnamachar Prasad
author_facet	Krishnamachar Prasad Lazuardi, Stephen
format	Theses and Dissertations
author	Lazuardi, Stephen
author_sort	Lazuardi, Stephen
title	0.13-micron CMOS device characterization
title_short	0.13-micron CMOS device characterization
title_full	0.13-micron CMOS device characterization
title_fullStr	0.13-micron CMOS device characterization
title_full_unstemmed	0.13-micron CMOS device characterization
title_sort	0.13-micron cmos device characterization
publishDate	2008
url	http://hdl.handle.net/10356/4564
_version_	1772827525481758720

0.13-micron CMOS device characterization

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