Study of digital breakdown in pMOSFETs with ultrathin gate dielectric and its significance to reliability assessment
90 p.
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| Main Author: | |
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| Other Authors: | |
| Format: | Theses and Dissertations |
| Published: |
2010
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| Subjects: | |
| Online Access: | http://hdl.handle.net/10356/39146 |
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| Institution: | Nanyang Technological University |
| Summary: | 90 p. |
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