Study of digital breakdown in pMOSFETs with ultrathin gate dielectric and its significance to reliability assessment

90 p.

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Bibliographic Details
Main Author:	Ashwin Srinivas.
Other Authors:	Pey Kin Leong
Format:	Theses and Dissertations
Published:	2010
Subjects:	DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
Online Access:	http://hdl.handle.net/10356/39146
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Institution:	Nanyang Technological University

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spelling	sg-ntu-dr.10356-391462023-07-04T15:03:46Z Study of digital breakdown in pMOSFETs with ultrathin gate dielectric and its significance to reliability assessment Ashwin Srinivas. Pey Kin Leong School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits 90 p. The purpose of this project is to study the gate oxide breakdown in ultra-thin pMOSFETs using current-limited multiple cycle constant voltage stress tests. Samples of various dimensions are to be subjected to low voltage stresses in inversion mode and the gradual degradation of the device characteristics recorded. The evolution of the gate current, under the phenomenon of progressive breakdown, provides an insight into the evolution of the conductor-like percolation path within the oxide layer. Master of Science (Microelectronics) 2010-05-21T04:45:49Z 2010-05-21T04:45:49Z 2007 2007 Thesis http://hdl.handle.net/10356/39146 application/pdf
institution	Nanyang Technological University
building	NTU Library
continent	Asia
country	Singapore Singapore
content_provider	NTU Library
collection	DR-NTU
topic	DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
spellingShingle	DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits Ashwin Srinivas. Study of digital breakdown in pMOSFETs with ultrathin gate dielectric and its significance to reliability assessment
description	90 p.
author2	Pey Kin Leong
author_facet	Pey Kin Leong Ashwin Srinivas.
format	Theses and Dissertations
author	Ashwin Srinivas.
author_sort	Ashwin Srinivas.
title	Study of digital breakdown in pMOSFETs with ultrathin gate dielectric and its significance to reliability assessment
title_short	Study of digital breakdown in pMOSFETs with ultrathin gate dielectric and its significance to reliability assessment
title_full	Study of digital breakdown in pMOSFETs with ultrathin gate dielectric and its significance to reliability assessment
title_fullStr	Study of digital breakdown in pMOSFETs with ultrathin gate dielectric and its significance to reliability assessment
title_full_unstemmed	Study of digital breakdown in pMOSFETs with ultrathin gate dielectric and its significance to reliability assessment
title_sort	study of digital breakdown in pmosfets with ultrathin gate dielectric and its significance to reliability assessment
publishDate	2010
url	http://hdl.handle.net/10356/39146
_version_	1772828874186424320

Study of digital breakdown in pMOSFETs with ultrathin gate dielectric and its significance to reliability assessment

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