Design of insulated gate bipolar transistor using novel structure

Design of insulated gate bipolar transistor using novel structure

In this work, Lateral Insulated Gate Bipolar Transistor (LIGBT) based on a novel structure of partial Silicon On Insulator (partial SOI) has been designed. The position of the silicon window has been determined by comparing the simulation results of full SOI and partial SOI, which has the silicon wi...

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Main Author: Zhang, Guowei
Other Authors: Tan, Cher Ming
Format: Theses and Dissertations
Published: 2008
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Power electronics
Online Access:http://hdl.handle.net/10356/3966
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Institution: Nanyang Technological University
id sg-ntu-dr.10356-3966
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spelling sg-ntu-dr.10356-39662023-07-04T15:16:36Z Design of insulated gate bipolar transistor using novel structure Zhang, Guowei Tan, Cher Ming School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Power electronics In this work, Lateral Insulated Gate Bipolar Transistor (LIGBT) based on a novel structure of partial Silicon On Insulator (partial SOI) has been designed. The position of the silicon window has been determined by comparing the simulation results of full SOI and partial SOI, which has the silicon window etched underneath anode or cathode. Master of Science (Microelectronics) 2008-09-17T09:41:22Z 2008-09-17T09:41:22Z 2002 2002 Thesis http://hdl.handle.net/10356/3966 Nanyang Technological University application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
topic DRNTU::Engineering::Electrical and electronic engineering::Power electronics
spellingShingle DRNTU::Engineering::Electrical and electronic engineering::Power electronics
Zhang, Guowei
Design of insulated gate bipolar transistor using novel structure
description In this work, Lateral Insulated Gate Bipolar Transistor (LIGBT) based on a novel structure of partial Silicon On Insulator (partial SOI) has been designed. The position of the silicon window has been determined by comparing the simulation results of full SOI and partial SOI, which has the silicon window etched underneath anode or cathode.
author2 Tan, Cher Ming
author_facet Tan, Cher Ming
Zhang, Guowei
format Theses and Dissertations
author Zhang, Guowei
author_sort Zhang, Guowei
title Design of insulated gate bipolar transistor using novel structure
title_short Design of insulated gate bipolar transistor using novel structure
title_full Design of insulated gate bipolar transistor using novel structure
title_fullStr Design of insulated gate bipolar transistor using novel structure
title_full_unstemmed Design of insulated gate bipolar transistor using novel structure
title_sort design of insulated gate bipolar transistor using novel structure
publishDate 2008
url http://hdl.handle.net/10356/3966
_version_ 1772829008671539200

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