Characterization of InGaAlAs/InAlAs/InP heterostructures grown by molecular beam epitaxy

Characterization of InGaAlAs/InAlAs/InP heterostructures grown by molecular beam epitaxy

In this thesis, intersubband absorption of Ino.53Gao.3Alo.17As/Ino.52Alo.48As multiple quantum well (MQW) structures using Fourier transform infrared (FTIR) spectrometry and its verification with photoluminescence (PL) and theoretical calculation are studied. Conduction band offset of the MQW derive...

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Main Author: Zhang, Weimin
Other Authors: Zhang, Dao Hua
Format: Theses and Dissertations
Published: 2008
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
Online Access:http://hdl.handle.net/10356/4001
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Institution: Nanyang Technological University
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spelling sg-ntu-dr.10356-40012023-07-04T15:18:07Z Characterization of InGaAlAs/InAlAs/InP heterostructures grown by molecular beam epitaxy Zhang, Weimin Zhang, Dao Hua School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials In this thesis, intersubband absorption of Ino.53Gao.3Alo.17As/Ino.52Alo.48As multiple quantum well (MQW) structures using Fourier transform infrared (FTIR) spectrometry and its verification with photoluminescence (PL) and theoretical calculation are studied. Conduction band offset of the MQW derived from varying temperature I-V measurements, and characteristics of Ino.53Gao.12Alo.35As/Ino.52Alo.4sAs heterojunctions are also investigated Master of Engineering 2008-09-17T09:42:12Z 2008-09-17T09:42:12Z 2007 2007 Thesis Zhang, W. (2007).Characterization of InGaAlAs/InAlAs/InP heterostructures grown by molecular beam epitaxy. Master’s thesis, Nanyang Technological University, Singapore. http://hdl.handle.net/10356/4001 Nanyang Technological University application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
topic DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
spellingShingle DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
Zhang, Weimin
Characterization of InGaAlAs/InAlAs/InP heterostructures grown by molecular beam epitaxy
description In this thesis, intersubband absorption of Ino.53Gao.3Alo.17As/Ino.52Alo.48As multiple quantum well (MQW) structures using Fourier transform infrared (FTIR) spectrometry and its verification with photoluminescence (PL) and theoretical calculation are studied. Conduction band offset of the MQW derived from varying temperature I-V measurements, and characteristics of Ino.53Gao.12Alo.35As/Ino.52Alo.4sAs heterojunctions are also investigated
author2 Zhang, Dao Hua
author_facet Zhang, Dao Hua
Zhang, Weimin
format Theses and Dissertations
author Zhang, Weimin
author_sort Zhang, Weimin
title Characterization of InGaAlAs/InAlAs/InP heterostructures grown by molecular beam epitaxy
title_short Characterization of InGaAlAs/InAlAs/InP heterostructures grown by molecular beam epitaxy
title_full Characterization of InGaAlAs/InAlAs/InP heterostructures grown by molecular beam epitaxy
title_fullStr Characterization of InGaAlAs/InAlAs/InP heterostructures grown by molecular beam epitaxy
title_full_unstemmed Characterization of InGaAlAs/InAlAs/InP heterostructures grown by molecular beam epitaxy
title_sort characterization of ingaalas/inalas/inp heterostructures grown by molecular beam epitaxy
publishDate 2008
url http://hdl.handle.net/10356/4001
_version_ 1772825887514820608

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