Heavily silicon doped InGaAlAs InP epilayers grown by molecular beam epitaxy

Journal of Crystal Growth

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Bibliographic Details
Main Authors: Ramam, A., Chua, S.J., Karunasiri, G., Vaya, P.R.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/80522
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Institution: National University of Singapore