Heavily silicon doped InGaAlAs InP epilayers grown by molecular beam epitaxy

Heavily silicon doped InGaAlAs InP epilayers grown by molecular beam epitaxy

Journal of Crystal Growth

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Bibliographic Details
Main Authors:	Ramam, A., Chua, S.J., Karunasiri, G., Vaya, P.R.
Other Authors:	ELECTRICAL ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/80522
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Institution:	National University of Singapore

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