Heavily silicon doped InGaAlAs InP epilayers grown by molecular beam epitaxy

Journal of Crystal Growth

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Main Authors:	Ramam, A., Chua, S.J., Karunasiri, G., Vaya, P.R.
Other Authors:	ELECTRICAL ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/80522
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-80522
record_format	dspace
spelling	sg-nus-scholar.10635-805222015-01-12T17:22:26Z Heavily silicon doped InGaAlAs InP epilayers grown by molecular beam epitaxy Ramam, A. Chua, S.J. Karunasiri, G. Vaya, P.R. ELECTRICAL ENGINEERING Journal of Crystal Growth 156 3 186-190 JCRGA 2014-10-07T02:58:28Z 2014-10-07T02:58:28Z 1995-11-02 Article Ramam, A.,Chua, S.J.,Karunasiri, G.,Vaya, P.R. (1995-11-02). Heavily silicon doped InGaAlAs InP epilayers grown by molecular beam epitaxy. Journal of Crystal Growth 156 (3) : 186-190. ScholarBank@NUS Repository. 00220248 http://scholarbank.nus.edu.sg/handle/10635/80522 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
description	Journal of Crystal Growth
author2	ELECTRICAL ENGINEERING
author_facet	ELECTRICAL ENGINEERING Ramam, A. Chua, S.J. Karunasiri, G. Vaya, P.R.
format	Article
author	Ramam, A. Chua, S.J. Karunasiri, G. Vaya, P.R.
spellingShingle	Ramam, A. Chua, S.J. Karunasiri, G. Vaya, P.R. Heavily silicon doped InGaAlAs InP epilayers grown by molecular beam epitaxy
author_sort	Ramam, A.
title	Heavily silicon doped InGaAlAs InP epilayers grown by molecular beam epitaxy
title_short	Heavily silicon doped InGaAlAs InP epilayers grown by molecular beam epitaxy
title_full	Heavily silicon doped InGaAlAs InP epilayers grown by molecular beam epitaxy
title_fullStr	Heavily silicon doped InGaAlAs InP epilayers grown by molecular beam epitaxy
title_full_unstemmed	Heavily silicon doped InGaAlAs InP epilayers grown by molecular beam epitaxy
title_sort	heavily silicon doped ingaalas inp epilayers grown by molecular beam epitaxy
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/80522
_version_	1681088903342194688

Heavily silicon doped InGaAlAs InP epilayers grown by molecular beam epitaxy

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