Partial-gated carbon nanotube field effect transistors (CNTFETs) on a transparent substrate
This project examines the characteristic of the carbon nanotube (CNT). The main focus will be on the partially gated CNT device. A comparison of partially gated sample and fully gated samples will be made during the experimental result discussion. The effect of dielectric thickness and electrode...
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| Format: | Final Year Project |
| Language: | English |
| Published: |
2010
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| Subjects: | |
| Online Access: | http://hdl.handle.net/10356/40786 |
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| Institution: | Nanyang Technological University |
| Language: | English |
| Summary: | This project examines the characteristic of the carbon nanotube (CNT). The main focus
will be on the partially gated CNT device.
A comparison of partially gated sample and fully gated samples will be made during the
experimental result discussion. The effect of dielectric thickness and electrode materials
will also be examined and recorded in this report.
Towards the end of the project, some suggestion on design layout of the device and
dielectric/electrode materials will be listed for future improvements. |
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