Partial-gated carbon nanotube field effect transistors (CNTFETs) on a transparent substrate

This project examines the characteristic of the carbon nanotube (CNT). The main focus will be on the partially gated CNT device. A comparison of partially gated sample and fully gated samples will be made during the experimental result discussion. The effect of dielectric thickness and electrode...

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Bibliographic Details
Main Author:	Huang, Jiun Hao.
Other Authors:	Zhang Qing
Format:	Final Year Project
Language:	English
Published:	2010
Subjects:	DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
Online Access:	http://hdl.handle.net/10356/40786
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Institution:	Nanyang Technological University
Language:	English

id	sg-ntu-dr.10356-40786
record_format	dspace
spelling	sg-ntu-dr.10356-407862023-07-07T16:05:57Z Partial-gated carbon nanotube field effect transistors (CNTFETs) on a transparent substrate Huang, Jiun Hao. Zhang Qing School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics This project examines the characteristic of the carbon nanotube (CNT). The main focus will be on the partially gated CNT device. A comparison of partially gated sample and fully gated samples will be made during the experimental result discussion. The effect of dielectric thickness and electrode materials will also be examined and recorded in this report. Towards the end of the project, some suggestion on design layout of the device and dielectric/electrode materials will be listed for future improvements. Bachelor of Engineering 2010-06-22T01:13:10Z 2010-06-22T01:13:10Z 2010 2010 Final Year Project (FYP) http://hdl.handle.net/10356/40786 en Nanyang Technological University 60 p. application/pdf
institution	Nanyang Technological University
building	NTU Library
continent	Asia
country	Singapore Singapore
content_provider	NTU Library
collection	DR-NTU
language	English
topic	DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
spellingShingle	DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics Huang, Jiun Hao. Partial-gated carbon nanotube field effect transistors (CNTFETs) on a transparent substrate
description	This project examines the characteristic of the carbon nanotube (CNT). The main focus will be on the partially gated CNT device. A comparison of partially gated sample and fully gated samples will be made during the experimental result discussion. The effect of dielectric thickness and electrode materials will also be examined and recorded in this report. Towards the end of the project, some suggestion on design layout of the device and dielectric/electrode materials will be listed for future improvements.
author2	Zhang Qing
author_facet	Zhang Qing Huang, Jiun Hao.
format	Final Year Project
author	Huang, Jiun Hao.
author_sort	Huang, Jiun Hao.
title	Partial-gated carbon nanotube field effect transistors (CNTFETs) on a transparent substrate
title_short	Partial-gated carbon nanotube field effect transistors (CNTFETs) on a transparent substrate
title_full	Partial-gated carbon nanotube field effect transistors (CNTFETs) on a transparent substrate
title_fullStr	Partial-gated carbon nanotube field effect transistors (CNTFETs) on a transparent substrate
title_full_unstemmed	Partial-gated carbon nanotube field effect transistors (CNTFETs) on a transparent substrate
title_sort	partial-gated carbon nanotube field effect transistors (cntfets) on a transparent substrate
publishDate	2010
url	http://hdl.handle.net/10356/40786
_version_	1772826420593033216

Partial-gated carbon nanotube field effect transistors (CNTFETs) on a transparent substrate

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