Pulsed laser annealing for the formation of ultra-shallow junctions for nano-scale metal-oxide-semiconductor technologies

The continuous scaling of gate dimensions has created a strong need for better ultrashallow junction technology to suppress short channel effect, which is more serious for shorter devices. As ion implantation remains the most popular method for dopant introduction, tremendous effort has been drawn i...

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Bibliographic Details
Main Author: Ong, Kuang Kian
Other Authors: Lee Pooi See
Format: Theses and Dissertations
Language:English
Published: 2010
Subjects:
Online Access:https://hdl.handle.net/10356/41418
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Institution: Nanyang Technological University
Language: English
Description
Summary:The continuous scaling of gate dimensions has created a strong need for better ultrashallow junction technology to suppress short channel effect, which is more serious for shorter devices. As ion implantation remains the most popular method for dopant introduction, tremendous effort has been drawn into the development of post-implantation annealing techniques. Laser annealing (LA) has been shown to be a promising technique in the formation of ultra-shallow junction due to a number of its favorable features. LA has a near-zero thermal budget that is capable of producing a highly activated and abrupt ultra-shallow junction.