Theoretical model for the I-V characteristics of the flash EEPROM cell

• Main Author: Chong, Wei Tao.
• Other Authors: Liu, Po-Ching
• Format: Theses and Dissertations
• Published: 2008
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
• Online Access: http://hdl.handle.net/10356/4155
• Institution: Nanyang Technological University

There exists a need to characterize the flash EEPROM memory without building any prototypes to predict the behavior of the flash EEPROM cell to reduce costs. Hence, an accurate simulation for the device current voltage (I-V) and other characteristics is important. With an accurate physical model, the parameters can be varied to give a better prediction of the current drive, threshold voltage etc. A good model is one that can reproduce the behavior of a physical device in computer simulation, is to generate the same results as experiments under the same stimuli. Similarly, a good model has to be accurate, a reasonable computation speed for the processing of the results and equation decomposability. However, a good model is difficult to achieve as accurate models are complicated and computational intensive while simple and efficient models forgo accuracy. The only way is to strike a balance by compromising accuracy for speed.