Theoretical model for the I-V characteristics of the flash EEPROM cell

• 主要作者: Chong, Wei Tao.
• 其他作者: Liu, Po-Ching
• 格式: Theses and Dissertations
• 出版: 2008
• 主題: DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
• 在線閱讀: http://hdl.handle.net/10356/4155

There exists a need to characterize the flash EEPROM memory without building any prototypes to predict the behavior of the flash EEPROM cell to reduce costs. Hence, an accurate simulation for the device current voltage (I-V) and other characteristics is important. With an accurate physical model, th...