Theoretical model for the I-V characteristics of the flash EEPROM cell

• المؤلف الرئيسي: Chong, Wei Tao.
• مؤلفون آخرون: Liu, Po-Ching
• التنسيق: Theses and Dissertations
• منشور في: 2008
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
• الوصول للمادة أونلاين: http://hdl.handle.net/10356/4155

There exists a need to characterize the flash EEPROM memory without building any prototypes to predict the behavior of the flash EEPROM cell to reduce costs. Hence, an accurate simulation for the device current voltage (I-V) and other characteristics is important. With an accurate physical model, th...