Application of phase shift masking to sub-micron contact level lithography

Application of phase shift masking to sub-micron contact level lithography

As device continues to shrink beyond the theoretical limit of the optical exposure tools, other options need to be considered. Resolution Enhancement Techniques (RET), such as Phase Shift Mask (PSM), Optical Proximity Correction (OPC) and / or Off Axis Illumination (OAI) will be required. Various ty...

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Main Author: Choo, Lay Cheng.
Other Authors: Tam, Siu Chung
Format: Theses and Dissertations
Published: 2008
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
Online Access:http://hdl.handle.net/10356/4158
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Institution: Nanyang Technological University
id sg-ntu-dr.10356-4158
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spelling sg-ntu-dr.10356-41582023-07-04T15:12:26Z Application of phase shift masking to sub-micron contact level lithography Choo, Lay Cheng. Tam, Siu Chung School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Microelectronics As device continues to shrink beyond the theoretical limit of the optical exposure tools, other options need to be considered. Resolution Enhancement Techniques (RET), such as Phase Shift Mask (PSM), Optical Proximity Correction (OPC) and / or Off Axis Illumination (OAI) will be required. Various types of PSM have been widely investigated by many lithographers. For contact hole masking, the Attenuated Phase Shift Mask (APSM) is the most feasible option due to the ease in mask fabrication. In addition, the APSM also allows random patterns to be printed. Master of Engineering 2008-09-17T09:45:44Z 2008-09-17T09:45:44Z 2000 2000 Thesis http://hdl.handle.net/10356/4158 Nanyang Technological University application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
topic DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
spellingShingle DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
Choo, Lay Cheng.
Application of phase shift masking to sub-micron contact level lithography
description As device continues to shrink beyond the theoretical limit of the optical exposure tools, other options need to be considered. Resolution Enhancement Techniques (RET), such as Phase Shift Mask (PSM), Optical Proximity Correction (OPC) and / or Off Axis Illumination (OAI) will be required. Various types of PSM have been widely investigated by many lithographers. For contact hole masking, the Attenuated Phase Shift Mask (APSM) is the most feasible option due to the ease in mask fabrication. In addition, the APSM also allows random patterns to be printed.
author2 Tam, Siu Chung
author_facet Tam, Siu Chung
Choo, Lay Cheng.
format Theses and Dissertations
author Choo, Lay Cheng.
author_sort Choo, Lay Cheng.
title Application of phase shift masking to sub-micron contact level lithography
title_short Application of phase shift masking to sub-micron contact level lithography
title_full Application of phase shift masking to sub-micron contact level lithography
title_fullStr Application of phase shift masking to sub-micron contact level lithography
title_full_unstemmed Application of phase shift masking to sub-micron contact level lithography
title_sort application of phase shift masking to sub-micron contact level lithography
publishDate 2008
url http://hdl.handle.net/10356/4158
_version_ 1772826201874759680

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